Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots
Identifieur interne : 000E97 ( Russie/Analysis ); précédent : 000E96; suivant : 000E98Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots
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Abstract
The spontaneous emission of far-infrared radiation (λ≅10-20 μm) from diode structures with vertically coupled InGaAs/AlGaAs quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots</title>
<author><name sortKey="Vorobev, L E" uniqKey="Vorobev L">L. E. Vorobev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>St. Petersburg State Technical University, 195251 St. Petersburg, Russia</s1>
<sZ>1 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>St. Petersburg State Technical University, 195251 St. Petersburg</wicri:regionArea>
<wicri:noRegion>195251 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Firsov, D A" uniqKey="Firsov D">D. A. Firsov</name>
</author>
<author><name sortKey="Shalygin, V A" uniqKey="Shalygin V">V. A. Shalygin</name>
</author>
<author><name sortKey="Tulupenko, V N" uniqKey="Tulupenko V">V. N. Tulupenko</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Donbass State Mechanical Engineering Academy, 343913 Kramatorsk, Ukraine</s1>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Ukraine</country>
<wicri:regionArea>Donbass State Mechanical Engineering Academy, 343913 Kramatorsk</wicri:regionArea>
<wicri:noRegion>343913 Kramatorsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shernyakov, Yu M" uniqKey="Shernyakov Y">Yu. M. Shernyakov</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg</wicri:regionArea>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name>
</author>
<author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name>
</author>
<author><name sortKey="Alferov, Zh I" uniqKey="Alferov Z">Zh. I. Alferov</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">98-0187667</idno>
<date when="1998-02-25">1998-02-25</date>
<idno type="stanalyst">PASCAL 98-0187667 AIP</idno>
<idno type="RBID">Pascal:98-0187667</idno>
<idno type="wicri:Area/Main/Corpus">017448</idno>
<idno type="wicri:Area/Main/Repository">016263</idno>
<idno type="wicri:Area/Russie/Extraction">000E97</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0021-3640</idno>
<title level="j" type="abbreviated">JETP lett.</title>
<title level="j" type="main">JETP letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Semiconductor diodes</term>
<term>Semiconductor quantum dots</term>
<term>Spontaneous emission</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>8530V</term>
<term>7320D</term>
<term>7830F</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Aluminium composé</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Point quantique semiconducteur</term>
<term>Emission spontanée</term>
<term>Diode semiconducteur</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The spontaneous emission of far-infrared radiation (λ≅10-20 μm) from diode structures with vertically coupled InGaAs/AlGaAs quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold. © 1998 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-3640</s0>
</fA01>
<fA02 i1="01"><s0>JTPLA2</s0>
</fA02>
<fA03 i2="1"><s0>JETP lett.</s0>
</fA03>
<fA05><s2>67</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>VOROBEV (L. E.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>FIRSOV (D. A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SHALYGIN (V. A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>TULUPENKO (V. N.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SHERNYAKOV (Yu. M.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LEDENTSOV (N. N.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>USTINOV (V. M.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>ALFEROV (Zh. I.)</s1>
</fA11>
<fA14 i1="01"><s1>St. Petersburg State Technical University, 195251 St. Petersburg, Russia</s1>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Donbass State Mechanical Engineering Academy, 343913 Kramatorsk, Ukraine</s1>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>275-279</s1>
</fA20>
<fA21><s1>1998-02-25</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>1199 B</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 1998 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>98-0187667</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i2="1"><s0>JETP letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The spontaneous emission of far-infrared radiation (λ≅10-20 μm) from diode structures with vertically coupled InGaAs/AlGaAs quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold. © 1998 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F20</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C20D</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H30F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>8530V</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7320D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7830F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Emission spontanée</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Spontaneous emission</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Diode semiconducteur</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor diodes</s0>
</fC03>
<fN21><s1>117</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>9807M000993</s0>
</fN47>
</pA>
</standard>
</inist>
</record>
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