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Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots

Identifieur interne : 000E97 ( Russie/Analysis ); précédent : 000E96; suivant : 000E98

Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots

Auteurs : RBID : Pascal:98-0187667

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Abstract

The spontaneous emission of far-infrared radiation (λ≅10-20 μm) from diode structures with vertically coupled InGaAs/AlGaAs quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold. © 1998 American Institute of Physics.

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Pascal:98-0187667

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<div type="abstract" xml:lang="en">The spontaneous emission of far-infrared radiation (λ≅10-20 μm) from diode structures with vertically coupled InGaAs/AlGaAs quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold. © 1998 American Institute of Physics.</div>
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